 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Power Transistors 2SD2486 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 0.70.1 Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q 16.70.3 14.00.5 q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 60 60 7 8 4 2 25 2 150 -55 to +150 Unit V V V A A A W C C s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IBP PC Tj Tstg Solder Dip 4.0 7.50.2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf * Conditions VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.8A VCE = 2V, IC = 2A IC = 2A, IB = 50mA IC = 2A, IB = 50mA VCE = 10V, IC = 0.5A, f = 10MHz IC = 2A, IB1 = 50mA, IB2 = -50mA, VCC = 50V min typ max 10 10 Unit A A V 60 500 60 0.5 1.5 70 0.5 3.6 1.1 1000 2000 V V MHz s s s FE1 Rank classification Q R Rank hFE1 500 to 1200 800 to 2000 1 Power Transistors PC -- Ta 30 3.0 (1) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) 2SD2486 IC -- VCE IB=5.0mA 4.0mA 2.5 3.0mA 2.5mA 2.0 2.0mA 1.5mA 1.5 1.0mA 1.0 0.5mA VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=40 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 25C -25C TC=100C TC=25C Collector power dissipation PC (W) 25 20 15 (2) 10 5 (3) (4) Collector current IC (A) 0.5 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 100000 IC/IB=40 hFE -- IC 10000 VCE=2V 3000 1000 300 100 30 10 3 1 0.01 0.03 fT -- IC VCE=10V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C 25C 10000 25C TC=100C 3000 1000 -25C 300 100 30 10 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 30 30000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=40 (IB1=-IB2) VCC=50V TC=25C Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Switching time ton,tstg,tf (s) Collector current IC (A) 10 3 10 ICP IC 3 1 0.3 0.1 0.03 0.01 10ms DC t=1ms tstg 1 0.3 0.1 0.03 0.01 tf ton 0.3 1 3 10 30 100 0 1 2 3 4 5 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 |
Price & Availability of 2SD2486
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |